DatasheetsPDF.com

SPP6308 Dataheets PDF



Part Number SPP6308
Manufacturers SYNC POWER
Logo SYNC POWER
Description Dual P-Channel MOSFET
Datasheet SPP6308 DatasheetSPP6308 Datasheet (PDF)

SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching.

  SPP6308   SPP6308



Document
SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES  P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)=950mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-363 (SC-70-6L) package design PIN CONFIGURATION (SOT-363/SC-70-6L) PART MARKING 2020/04/14 Ver.3 Page 1 SPP6308 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPP6308S36RGB SOT-363 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6308S36RGB : Tape Reel ; Pb–Free ; Halogen –Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=80℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State VDSS VGSS ID IDM IS PD TJ TSTG RθJA Part Marking 08 Typical -20 ±12 -1.0 -0.7 -3 -0.6 0.35 0.19 -55/150 -55/150 360 400 Unit V V A A A W ℃ ℃ ℃/W 2020/04/14 Ver.3 Page 2 SPP6308 Dual P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS VDS=0V,VGS=±12V VDS=-20V,VGS=0V IDSS VDS=-20V,VGS=0V TJ=55℃ ID(on) VDS≤ -4.5V,VGS =-5V RDS(on) gfs VGS=-4.5V,ID=-1.0A VGS=-2.5V,ID=-0.8A VGS=-1.8V,ID=-0.5A VDS=-10V,ID=-1.0A VSD IS=-0.5A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,VGS=-4.5V ID=-0.88A VDS=-10V,VGS=0V f=1MHz VDD=-10V,RL=20Ω , ID=-0.5A VGEN=-4.5V,RG=6Ω Min. Typ Max. Unit -20 -0.35 V -0.8 ±100 nA -1 uA -5 -2 A 0.42 0.52 0.58 0.70 Ω 0.75 0.95 1.5 S -0.8 -1.2 V 1.5 2.0 0.3 nC 0.2 145 25 pF 10 18 30 25 40 nS 15 45 12 20 2020/04/14 Ver.3 Page 3 SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/14 Ver.3 Page 4 SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/14 Ver.3 Page 5 SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/14 Ver.3 Page 6 SPP6308 Dual P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/04/14 Ver.3 Page 7 .


SPP6309 SPP6308 MAX3558


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)