Document
SPP6308
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter
FEATURES P-Channel
-20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)=950mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 (SC-70-6L) package design
PIN CONFIGURATION (SOT-363/SC-70-6L)
PART MARKING
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2
Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPP6308S36RGB
SOT-363
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6308S36RGB : Tape Reel ; Pb–Free ; Halogen –Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃)
TA=25℃ TA=80℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature Storage Temperature Range
Thermal Resistance-Junction to Ambient
T ≤ 10sec Steady State
VDSS VGSS
ID
IDM IS
PD
TJ TSTG RθJA
Part Marking 08
Typical
-20 ±12 -1.0 -0.7 -3 -0.6 0.35 0.19 -55/150 -55/150 360 400
Unit
V V A
A A W
℃ ℃ ℃/W
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
RDS(on) gfs
VGS=-4.5V,ID=-1.0A VGS=-2.5V,ID=-0.8A VGS=-1.8V,ID=-0.5A
VDS=-10V,ID=-1.0A
VSD IS=-0.5A,VGS=0V
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=-10V,VGS=-4.5V ID=-0.88A
VDS=-10V,VGS=0V f=1MHz
VDD=-10V,RL=20Ω , ID=-0.5A VGEN=-4.5V,RG=6Ω
Min. Typ Max. Unit
-20 -0.35
V -0.8
±100 nA
-1 uA
-5
-2
A
0.42 0.52 0.58 0.70 Ω
0.75 0.95
1.5
S
-0.8 -1.2 V
1.5 2.0
0.3
nC
0.2
145
25
pF
10
18
30
25
40 nS
15
45
12
20
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP6308
Dual P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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