SPN5454

SPN5454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN5454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN5454 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  40V/10A,RDS(ON)=18mΩ@VGS=10V  40V/ 8A,RDS(ON)=20mΩ@VGS=4.5V  40V/ 6A,RDS(ON)=28mΩ@VGS=2.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L PART MARKING 2020/04/30 Ver.3 Page 1 SPN5454 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN5454T252RGB TO-252-2L ※ SPN5454T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN5454 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbol VDSS Gate –Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM Avalanche Current Power Dissipation TA=25℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 30A , VDD = 20V. ) TO-252-2L TO-251 Operating Junction T...