SPN2054

SPN2054 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS Power Management in Desktop Computer DC/DC Converter LCD Display inverter FEATURES  20V/12A,RDS(ON)=40mΩ@VGS=10V  20V/7A,RDS(ON)=45mΩ@VGS=4.5V  20V/4A,RDS(ON)=50mΩ@VGS=2.5V  20V/2A,RDS(ON)=60mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION(TO-252-2L) PART MARKING 2020/04/28 Ver.4 Page 1 SPN2054 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN2054T252RGB TO-252-2L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2054T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN2054 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power ...