SPP6507
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power fie...
SPP6507
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V -30V/-1.0A,RDS(ON)=215mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design
PIN CONFIGURATION( SOT-23-6L )
PART MARKING
2020/02/19 Ver.3
Page 1
SPP6507
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1
ORDERING INFORMATION
Part Number
Package
SPP6507S26RGB
SOT-23-6L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP6507S26RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise n...