SMMBT5551LT3G

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc 1 Vdc 2 SOT−23 (TO−236) CASE 318 STYLE 6 3 MARKING DIAGRAM Collector − Base Voltage VCBO x1x M G G 1 Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc mAdc V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA PD ORDERING INFORMATION Device MMBT5550LT1G MMBT5551LT1G SMMBT5551LT1G MMBT5551LT1G SMMBT5551LT3G Package SOT−23 (Pb−Free) S...