MMBT5551L

High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MMBT5550 MMBT5551 VCEO 140 160 Vdc Collector −Base Voltage MMBT5550 MMBT5551 VCBO 160 180 Vdc Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD 6.0 600 > 8000 > 400 Vdc mAdc V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 1 BASE 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM x1x M G G 1 x1x = Device Code M1F = MMBT5...