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AM3407 Dataheets PDF



Part Number AM3407
Manufacturers AXElite
Logo AXElite
Description P-Channel Enhancement Mode MOSFET
Datasheet AM3407 DatasheetAM3407 Datasheet (PDF)

AM3407 P-Channel Enhancement Mode MOSFET Features • -30V/-4.5A, RDS(ON)=43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S G S SOT-23 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D P Channel MOSFET G Ordering and Marking Information VÛmw`R•yÑb€ AM3407 w.goftech.com Package R : SOT23-3L Packing.

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AM3407 P-Channel Enhancement Mode MOSFET Features • -30V/-4.5A, RDS(ON)=43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S G S SOT-23 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D P Channel MOSFET G Ordering and Marking Information VÛmw`R•yÑb€ AM3407 w.goftech.com Package R : SOT23-3L Packing Package Packing Blank : Tube A : Taping AM3407: B7XXX XXX - Date Code Note: AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate terminaAXElite lead-free products meet or exceed the lead-free requirements tion finish; which are fully compliant with RoHS. of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. AXElite defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 1 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3407 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Parameter (TA = 25°C unless otherwise noted) Rating -30 ±25 VGS=-10V -4.5 -16 -1.8 150 -55 to 150 TA=25°C TA=100°C 1.4 0.3 150 Unit V A A °C W °C/W Thermal Resistance-Junction to Ambient 2 Note: *Surface Mounted on 1in pad area, t ≤ 5sec. Electrical Characteristics Symbol Static Characteristics VÛmw`R•yÑb€ (TA = 25°C unless otherwise noted) AM3407 Min. Typ. Max. Parameter Test Conditions Unit BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd a a Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current w.goftech.com VGS=0V, IDS=-250µA VDS=-24V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±25V, VDS=0V VGS=-10V, IDS=-4.5A VGS=-4.5V, IDS=-3A ISD=-1.8A, VGS=0V -30 -1 - -1.8 43 60 -0.8 -1 -30 -2.5 ±100 52 78 -1.3 V µA V nA mΩ V Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Total Gate Charge VDS=-15V, VGS=-10V, IDS=-4.5A - 13 2 3 18 nC Gate-Source Charge Gate-Drain Charge 2 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3407 Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) AM3407 Min. Typ. Max. Test Conditions Unit Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf trr Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge .


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