Document
AM3407
P-Channel Enhancement Mode MOSFET
Features
•
-30V/-4.5A, RDS(ON)=43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V
Pin Description
Top View
D
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
S
G S
SOT-23
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
D
P Channel MOSFET
G
Ordering and Marking Information
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AM3407
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Package R : SOT23-3L
Packing Package
Packing Blank : Tube A : Taping
AM3407:
B7XXX
XXX - Date Code
Note: AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate terminaAXElite lead-free products meet or exceed the lead-free requirements tion finish; which are fully compliant with RoHS. of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. AXElite defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
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Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3407
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Parameter
(TA = 25°C unless otherwise noted)
Rating -30 ±25 VGS=-10V -4.5 -16 -1.8 150 -55 to 150 TA=25°C TA=100°C 1.4 0.3 150 Unit V A A °C W °C/W
Thermal Resistance-Junction to Ambient
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Note: *Surface Mounted on 1in pad area, t ≤ 5sec.
Electrical Characteristics
Symbol Static Characteristics
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(TA = 25°C unless otherwise noted) AM3407 Min. Typ. Max.
Parameter
Test Conditions
Unit
BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd
a a
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
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VGS=0V, IDS=-250µA VDS=-24V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±25V, VDS=0V VGS=-10V, IDS=-4.5A VGS=-4.5V, IDS=-3A ISD=-1.8A, VGS=0V
-30 -1 -
-1.8 43 60 -0.8
-1 -30 -2.5 ±100 52 78 -1.3
V µA V nA mΩ V
Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
Gate Charge Characteristics Total Gate Charge
VDS=-15V, VGS=-10V, IDS=-4.5A -
13 2 3
18 nC
Gate-Source Charge Gate-Drain Charge
2
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3407
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted) AM3407 Min. Typ. Max.
Test Conditions
Unit
Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf
trr
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge
.