AM2301

AM2301 P-Channel Enhancement Mode MOSFET Features z Pin Description Top View D -20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) @ VGS= -2.5V z z Super High Dense Cell Design Reliable and Rugged G S SOT-23 S Applications z Power Management in Notebook Computer, € Portable Equipment and Battery `RyÑb Powered Systems. G VÛmw w ww ot f o g . ec o h.c D P Channel MOSFET m Ordering and Marking Information A M2301 Package R : SOT23-3L Packing Packing Package Blank : Tube A : Taping AM2301 : A1XXX XXX – Date Code AM2301 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Notes： (TA=25°C Unless Otherwise Noted) Rating -20 ±12 -2.5 -10 -1.5 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 W °C/W V A A °C Parameter Drain-Source Voltage Gate-Source Voltage Continue Drain Current Pulsed Drain Current Diode continuous forward current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2 Unit *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) AM2301 Min. Typ. Max. Test Condition Unit Static Characteristics € BVDSS Drain-Source Breakdown `RyÑb Voltage IDSS VGS(th) IGSS RDS(ON) VSD ote f o g Gate Threshold Voltage w. w w Gate Leakage Current Zero Gate Voltage Drain Current h.c VÛmw m DS=-16V, VGS=0V V o VGS=0V, IDS=-250μA TJ=85°C VDS=VGS, IDS=-250μA -20 -1 -30 -0.45 -0.7 85 110 -0...