AM2300

AM2300 N-Channel Enhancement Mode MOSFET Features 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=115mΩ(typ.) @ VGS=2.5V Pin Description D Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of SOT-23 Ordering and Marking Information Ñb€ y R ` VÛmw m A M2300 Package .co h c R : SOT23-3L e t o f Packing .go w Blank : Tube Packing A : Taping ww Package AM2300 : A0XXX XXX – Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±12 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. AX EL I TE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 AM2300 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.25 0.5 150 -55 to 150 100 W °C °C °C/W Unit Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a a (TA = 25°C unless otherwise noted) AM...