AM1010N

AM1010N 100V N-Channel MOSFET  GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES 1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by: VÛmw`RyÑb€ w.goftechm 1/8 AM1010N  ORDER/MARKING INFORMATION Order Information Top Marking Logo AM1010N X X Package Type Packing E: SOT223-3L A : Taping  ABSOLUTE MAXIMUM RATINGS Characteristics Drain-Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 70°C) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) AM 1 0 1 0 N Y WW X Part number ID code:internal WW:01~52 Year: A=2010 1=2011 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL RθJA Rating 100 1.2 0.96 4.4 ±25 50 1.2 0.2 6.0 2.0 0.016 -55 to +150 300 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C °C/W Ñ€ b y Peak Diode Recovery dv/dt (Note 2) R ` w VÛm Power Dissi...