C1984L

2SC1383L/2SC1384L Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.9±0.2 www.DataSheet4U.com NPN Silicon General Purpose Transistor TO-92L 3 .9 ±0.2 FEATURE Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ (1. 27 Typ. ) 1. 4 +0.R2 –0. 2 1 2 3 2.54 ±0.1 8.0±0.2 1: Emitter 2: Collector 3: Base Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage 2SC1383L 2SC1384L Collector-emitter breakdown voltage 2SC1383L 2SC1384L Emitter-base breakdown voltage Collector cut-off current unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) otherwise Test specified) MIN 30 60 25 50 5 0.1 85 50 0.4 1.2 100 V V MHz 340 MAX UNIT V V V µA conditions Ic= 10µA , IE=0 IC=2mA , IB=0 IE= 10µA, IC=0 VCB=20V , VCE=10 V, VCE=5 V, IE=0 IC= 500mA IC= 1A DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) IC= 500m A, IB=50mA IC= 500mA , IB= 50mA fT VCE= 10 V, IC= 50mA CLASSIFICATION OF hFE(1) Rank Range Q 85-170 R 120-240 S 170-340 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SC1383L/2SC1384L Elektronische Bauelemente NPN Silicon ...