FLM1415-8F

FLM1415-8F Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm(Typ.) High Gain: G1dB=5.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 14.5 to 15.3GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM1415-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -65 to +175 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Channel Tem perature Sym bol V DS IGF IGR Tch Condition RG=100 ohm RG=100 ohm Lim it ≤10 ≤32.0 ≥-4.4 150 Unit V mA mA deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness Therm al Resistance Channel Tem perature Rise Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G Rth ∆Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=2200mA V DS=5V , IDS=170mA IGS=-170uA V DS=10V IDSDC=0.65 IDSS (typ.) f= 14.5 to 15.3 GHz Zs=ZL=50 ohm Channel to Case 10V x Idsr X Rth Min. -0.5 -5.0 38.0 4.0 Lim it Typ. 3400 3400 -1.5 39.0 5.0 220...