FLM1415-6F
Internally Matched Power GaAs FET FEATURES
High Output Power: P1dB = 37.0dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM1415-6F is a power GaAs FET that is internally matched ...
