FLM1414-15F

FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1414-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 75 -65 to +175 175 Unit V V W o C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=50Ω RG=50Ω Condition Limit ≦10 ≦48 ≧-6.6 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=3600mA VDS=5V , IDS=300mA IGS=-340µA VDS=10V f=14.0 - 14.5 GHz IDS=0.6IDSS(typ) Zs=ZL=50Ω Min. -0.5 -5.0 41.5 5.0 -42.0 Limit Typ. 7.2 6700 -1.5 42.0 6.0 4200 26 -45.0 Max. 10.0 -3.0 5000 1.2 - Unit A mS V V dBm dB mA % dB dBc Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise f=14.5 GH...