FLM1314-18F

FLM1314-18F Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm(Typ.) High Gain: G1dB=6.0dB(Typ.) High PAE: ηadd=27%(Typ.) Broad Band: 13.75 to 14.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM1314-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 75 -65 to +150 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition RG=25 ohm RG=25 ohm Lim it ≤10 ≤44.6 ≥-9.6 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G IM3 Rth ∆Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=4.65A V DS=5V , IDS=390mA IGS=-390uA V DS=10V IDSDC=4.0A f= 13.75 to 14.5 GHz Zs=ZL=50 ohm f=14.5 GHz ∆f=10MHz ，2-tone Test Pout=36.0dBm (S.C.L.) Channel to Case 10V x Idsr X Rth Min. -0.5 -5.0...