FLM7785-18F
C-Band Internally Matched FET FEATURES
High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for standar...