SLM5868-25F

SLM5868-25F C-band Internally Matched FET FEATURES High Output Power: P1dB=44.0dBm(Typ.) High Gain: G1dB=9.0dB(Typ.) High PAE: hadd=34%(Typ.) Broad Band: 5.85 to 6.75GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The SLM5868-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 +175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=25 ohm RG=25 ohm -65 to +150 +155 Recom m end 10 +64.0 -11.2 Unit V mA mA deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr h add DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=6.5A V DS=5V...