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FLM5359-45F Dataheets PDF



Part Number FLM5359-45F
Manufacturers SUMITOMO
Logo SUMITOMO
Description C-Band Internally Matched FET
Datasheet FLM5359-45F DatasheetFLM5359-45F Datasheet (PDF)

FLM5359-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate.

  FLM5359-45F   FLM5359-45F



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FLM5359-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 150 -65 to +175 175 Limit <= 12 <= 107.2 >=-23.2 Unit V V W deg.C deg.C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=13ohm Reverse Gate Current IGR RG=13ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=12V IDS(DC)=8.0A (typ.) f= 5.3 to 5.9 GHz Zs =ZL=50 ohm Channel to Case 12V x IDS(DC) x Rth IK Limit Unit Min. Typ. Max. 16.0 A 8000 mS -1.0 -2.0 -3.5 V -5.0 V 46.0 46.5 dBm 7.5 8.5 dB 8.5 10.0 A 36 % 1.4 dB 0.8 1.0 deg.C/W 100 deg.C G.C.P.: Gain Compression Point Class 3A ESD Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm) RoHS Compliance Yes 4000V to 8000V Edition 1.3 Oct. 2012 1 FLM5359-45F C-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER VDS=12V, IDS=8.0A, f=5.6GHz POWER DERATING CURVE Total Power Dissipation [W] Case Temperature [deg.C] Input Power (dBm) OUTPUT POWER vs FREQUENCY VDS=12V, IDS=8.0A Output Power [dBm] Frequency [GHz] Edition 1.3 Oct. 2012 2 Power Added Efficiency (%) Output Power (dBm) FLM5359-45F C-Band Internally Matched FET ■ S-PARAMETER VDS=12V, IDS=7.0A Freq. [GHz] 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 S11 MAG ANG 0.668 -150.7 0.595 -168.2 0.510 172.3 0.391 148.1 0.268 119.3 0.154 71.6 0.126 -2.5 0.194 -55.4 0.274 -88.6 0.346 -112.3 0.421 -134.5 S21 MAG ANG 2.792 11.2 3.083 -7.4 3.380 -28.3 3.652 -50.3 3.773 -73.4 3.740 -96.7 3.593 -119.0 3.372 -140.0 3.149 -159.9 2.900 -178.7 2.686 162.8 S12 MAG ANG 0.031 -1.5 0.039 -31.3 0.048 -61.7 0.057 -86.5 0.065 -112.3 0.071 -136.4 0.074 -158.3 0.076 -179.5 0.073 160.9 0.073 141.5 0.070 124.6 S2 MAG ANG 0.528 -114.3 0.470 -136.0 0.420 -162.5 0.395 166.1 0.397 132.7 0.422 102.2 0.461 75.6 0.500 54.6 0.529 38.1 0.546 23.9 0.543 12.0 Edition 1.3 Oct. 2012 3 FLM5359-45F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm Edition 1.3 Oct. 2012 4 FLM5359-45F C-.


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