FLM5359-4F

FLM5359-4F C-Band Internally Matched FET FEATURES High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 10.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 5.3 to 5.9GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM5359-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (V DS ) should not exceed 10 volts. 2. The forw ard and reverse gate currents should not exceed 16.0 and -2.2 mA respectively w ith gate resistance of 100ohm. Rating 15 -5 25.0 -65 to +175 175 Unit V V W deg.C deg.C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on EIAJ ED-4701 C-111A (C=100...