HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
34A, 1000V Latch Free Operation Typical Fall Time 520ns High Input Impedance Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The d...
