DatasheetsPDF.com
FCB36N60N
N-Channel MOSFET
Description
FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A Ultra low gate charge (Typ. Qg = 86 nC) Low effective output capacitance (Typ. Coss.eff = 361 pF) 100% avalanche tested RoHS compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s ...
Fairchild Semiconductor
Download FCB36N60N Datasheet
Similar Datasheet
FCB36N60N
N-Channel MOSFET
- Fairchild Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
