N-Channel IGBT
TSG40N120CE
N-Channel IGBT with FRD.
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
PRODUCT SUMMARY VCES (V)
12...
Description
TSG40N120CE
N-Channel IGBT with FRD.
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
PRODUCT SUMMARY VCES (V)
1200
VGES (V)
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Features
● ● ● 1200V NPT Trench Technology High Speed Switching Low Conduction Loss
Block Diagram
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current * Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature TJ=25 C TJ=100 C
o o
Symbol
VCES VGES TC=25 C TC=100 C
o o
Limit
1200 ±20 64
Unit
V V A A A A A W
IC ICM IF IFM PD TJ TSTG
40 120 40 240 208 83 -55 to +150 -55 to +150
ºC
o
C
1/10
Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient IGBT DIODE
Symbol
RӨJC RӨJA
Limit
0.6 2.2 25
Unit
o
C/W
Electrical Specificatio...
Similar Datasheet