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P6N80

Fairchild Semiconductor
Part Number P6N80
Manufacturer Fairchild Semiconductor
Description FQP6N80
Published Jul 9, 2014
Detailed Description FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File P6N80 PDF File

P6N80
P6N80

Overview
FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 5.
8A, 800V, RDS(on) = 1.
95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3...


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