Document
FJP1943 — PNP Epitaxial Silicon Transistor
November 2008
FJP1943 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts
1
TO-220 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Ta = 25°C unless otherwise noted
Parameter
Ratings
-230 -230 -5 -15 -1.5 80 0.64 - 50 ~ +150
Units
V V V A A W W/°C °C
Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
* Device mounted on minimum pad size
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Ratings
1.25
Units
°C/W
hFE Classification
Classification
hFE1
R
55 ~ 110
O
80 ~ 160
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 1
www.fairchildsemi.com
FJP1943 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC=-5mA, IE=0 IC=-10mA, RBE=∞ IE=-5mA, IC=0 VCB=-230V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-7A IC=-8A, IB=-0.8A VCE=-5V, IC=-7A VCE=-5V, IC=-1A VCB=-10V, f=1MHz
Min.
-230 -230 -5
Typ.
Max.
Units
V V V
-5.0 -5.0 55 35 60 -0.4 -1.0 30 360 -3.0 -1.5 160
µA µA
V V MHz pF
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
Ordering Information
Part Number
FJP1943RTU FJP1943OTU
Marking
J1943R J1943O
Package
TO-220 TO-220
Packing Method
TUBE TUBE
Remarks
hFE1 R grade hFE1 O grade
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 2
www.fairchildsemi.com
FJP1943 — PNP Epitaxial Silicon Transistor
Typical Characteristics
-20 -18
IB = -1A
IB = -900mA IB = -800mA IB = -700mA IB = -600mA A IB = -500m A IB = -400m IB = -300mA IB = -200mA IB = -100mA
Tj = 125 C
o
VCE = -5V Tj = 25 C
o
IC[mA], COLLECTOR CURRENT
-16 -14 -12 -10 -8 -6 -4 -2
hFE, DC CURRENT GAIN
100
Tj = -25 C
o
10
-0
-2
-4
-6
-8
-10
1 0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R Grade )
10000
Tj = 125 C Tj = 25 C
o
VCE = -5V
100 Tj = -25 C
o
Vce(sat)[mV], SATURATION VOLTAGE
o
Ic=-10Ib
hFE, DC CURRENT GAIN
1000
10
Tj=125 C 100
o
Tj=25 C
o
Tj=-25 C
o
1 0.1
1
10
10 0.1
1
10
IC[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain ( O Grade )
Figure 4. Collector-Emitter Saturation Voltage
14
10000
Vbe(sat)[mV], SATURATION VOLTAGE
Ic=-10Ib
12
IC[A], COLLECTOR CURRENT
V CE = 5V
10
8
Tj=-25 C 1000
o
Tj=25 C
o
6
Tj=125 C
o
4
2
100 0.1
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1
10
Ic[A], COLLECTOR CURRENT
V BE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 3
www.fairchildsemi.com
FJP1943 — PNP Epitaxial Silicon Transistor
Typical Characteristics
100
Transient Thermal Resistance, Rthjc[ C / W]
1.2
PC[W], POWER DISSIPATION
80
o
1.0
0.8
60
0.6
40
0.4
20
0.2
0 0 25 50
o
75
100
125
150
175
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
TC[ C], CASE TEMPERATURE
Pulse duration [sec]
Figure 7. Power Derating
Figure 8. Thermal Resistance
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 4
www.fairchildsemi.com
FJP1943 — PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 5
www.fairchildsemi.com
FJP1943 PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B
www.fairchildsemi.com 6
.