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FJP1943OTU Dataheets PDF



Part Number FJP1943OTU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet FJP1943OTU DatasheetFJP1943OTU Datasheet (PDF)

FJP1943 — PNP Epitaxial Silicon Transistor November 2008 FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same transisto.

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FJP1943 — PNP Epitaxial Silicon Transistor November 2008 FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -230 -230 -5 -15 -1.5 80 0.64 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Ratings 1.25 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 1 www.fairchildsemi.com FJP1943 — PNP Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=-5mA, IE=0 IC=-10mA, RBE=∞ IE=-5mA, IC=0 VCB=-230V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-7A IC=-8A, IB=-0.8A VCE=-5V, IC=-7A VCE=-5V, IC=-1A VCB=-10V, f=1MHz Min. -230 -230 -5 Typ. Max. Units V V V -5.0 -5.0 55 35 60 -0.4 -1.0 30 360 -3.0 -1.5 160 µA µA V V MHz pF * Pulse Test: Pulse Widt=20µs, Duty Cycle≤2% Ordering Information Part Number FJP1943RTU FJP1943OTU Marking J1943R J1943O Package TO-220 TO-220 Packing Method TUBE TUBE Remarks hFE1 R grade hFE1 O grade © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 2 www.fairchildsemi.com FJP1943 — PNP Epitaxial Silicon Transistor Typical Characteristics -20 -18 IB = -1A IB = -900mA IB = -800mA IB = -700mA IB = -600mA A IB = -500m A IB = -400m IB = -300mA IB = -200mA IB = -100mA Tj = 125 C o VCE = -5V Tj = 25 C o IC[mA], COLLECTOR CURRENT -16 -14 -12 -10 -8 -6 -4 -2 hFE, DC CURRENT GAIN 100 Tj = -25 C o 10 -0 -2 -4 -6 -8 -10 1 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade ) 10000 Tj = 125 C Tj = 25 C o VCE = -5V 100 Tj = -25 C o Vce(sat)[mV], SATURATION VOLTAGE o Ic=-10Ib hFE, DC CURRENT GAIN 1000 10 Tj=125 C 100 o Tj=25 C o Tj=-25 C o 1 0.1 1 10 10 0.1 1 10 IC[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage 14 10000 Vbe(sat)[mV], SATURATION VOLTAGE Ic=-10Ib 12 IC[A], COLLECTOR CURRENT V CE = 5V 10 8 Tj=-25 C 1000 o Tj=25 C o 6 Tj=125 C o 4 2 100 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 10 Ic[A], COLLECTOR CURRENT V BE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 3 www.fairchildsemi.com FJP1943 — PNP Epitaxial Silicon Transistor Typical Characteristics 100 Transient Thermal Resistance, Rthjc[ C / W] 1.2 PC[W], POWER DISSIPATION 80 o 1.0 0.8 60 0.6 40 0.4 20 0.2 0 0 25 50 o 75 100 125 150 175 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 TC[ C], CASE TEMPERATURE Pulse duration [sec] Figure 7. Power Derating Figure 8. Thermal Resistance © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 4 www.fairchildsemi.com FJP1943 — PNP Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 5 www.fairchildsemi.com FJP1943 PNP Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B www.fairchildsemi.com 6 .


FJP1943RTU FJP1943OTU FJL4215


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