FDP5N50U

FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G D S TO-220 FDP Series GD S TO-220F FDPF Series (potted) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 -55 to +150 300 4 2.4 16 216 4 8.5 4.5 28 0.22 FDP5N50U FDPF5N50UT 500 ±30 4* 2.4* 16* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Ran...