13003

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 700 400 9 1500 1500 150 -55~+150 Unit V V V mA mW o o C C 1. Base 2. Collector 3. Emitter Electrical Characteristics (TA=25oC) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE FT tf ts Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=10V, IC=0.5mA IC=1A IB=250mA IC=1A, IB=250mA IE=2A VCE=10V, IC=100mA f=1MHz IC=1A, IB1=-1B2=0.2mA, Vcc= 100V 5 0.5 2.5 MHz µS µS 8 5 1 1.2 3 V V V Min 700 400 9 1 500 1 40 Max Unit V V V mA £g A mA hFE(1) CLASSIFICATION Classification hFE(1) 8-15 15-20 20-25 25-30 30-35 35-40 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 E...