OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C ...
OptiMOS® Power-
Transistor
Features N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature Green package (lead free)
PG-TO263-3-2
Ultra low Rds(on)
100% Avalanche tested
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07
Product Summary V DS R DS(on),max (SMD version) ID
75 V 7.1 mΩ 80 A
PG-TO220-3-1
PG-TO262-3-1
Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code Marking SP0002-19048 2N0807 SP0002-19040 2N0807 SP0002-19043 2N0807
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4)
I D,pulse E AS V GS
T C=25 °C I D=80A
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
80
A
80
320
810
mJ
±20
V
300
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2006-03-03
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction ambient, leaded
R thJA
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherw...
