Document
SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell
TM
structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60DTR Package Type TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21 Page 1 of 10
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.27 Rating SVF2N60M/D SVF2N60T 600 ±30 2.0 8 44 0.35 115 -55~+150 -55~+150 23 0.18 SVF2N60F Unit V V A A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVF2N60M/D 3.7 110 SVF2N60T 2.86 62.5 SVF2N60F 5.56 120 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=2.0A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=1.0A VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=2.0A, RG=25Ω Min. 600 --2.0 -----------Typ. ----3.7 250.1 35.7 1.1 9.2 23.4 15.3 20.1 5.67 1.74 1.99 Max. -1.0 ±100 4.0 4.2 ----------nC ns pF Unit V µA nA V Ω
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21 Page 2 of 10
SVF2N60M/F/T/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junct.