Document
SVF2N60M/MJ/NF/F/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ.)=3.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR
Package Type
TO-251D-3L TO-251J-3L TO-126F-3L TO-220F-3L TO-252-2L
Marking
SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60D
Hazardous substance control
Halogen free Halogen free
Pb free Pb free Halogen free
Packing
Tube Tube Tube Tube Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.5 Page 1 of 12
SVF2N60M/MJ/NF/F/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note1)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF2N 60NF
16 0.13
Ratings
SVF2N
SVF2N
60M/D
60MJ
600
±30
2.0
1.3
8.0
34 35
0.27 0.28
115
-55~+150
-55~+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RθJC RθJA
SVF2N 60NF 7.81 120
Ratings
SVF2N 60M/D
SVF2N 60MJ
3.7 3.57
62.0 62.0
SVF2N 60F
23 0.18
Unit
V V
A
A W W/C mJ C C
SVF2N 60F 5.56 62.5
Unit
C/W C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.5 Page 2 of 12
SVF2N60M/MJ/NF/F/D_Datasheet
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS
IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=1.0A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=300V,ID=2.0A, RG=25 (Note 2,3)
VDS=480V,ID=2.0A, VGS=10V (Note 2,3)
Min. 600
--2.0
--
179 ----------
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IS Integral Reverse P-N Junction ISM Diode in the MOSFET VSD IS=2.0A,VGS=0V Trr IS=2.0A,VGS=0V, Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=2.52A, VDD=100V, RG=25, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min. ------
Typ. -----
3.7
233 32 2.8 8.9 23.0 23.4 24.9 8.24 1.64 4.44
Typ. ----
326 0.87
Max. -1.0
±100 4.0
4.2
303 ----------
Unit V µA nA V
pF
ns
nC
Max. 2.0 8.0 1.4 ---
Unit
A
V ns µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.5 Page 3 of 12
TYPICAL CHARACTERISTICS
SVF2N60M/MJ/NF/F/D_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:3.5 Page 4 of 12
SVF2N60M/MJ/NF/F/D_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Drain-Source Breakdown Voltage (Normalized)– BVDSS
1.1 1.0
Drain Current - ID(A)
0.9
0.8 -100
-50
0
Notes: 1. VGS=0V 2. ID=250µA
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating Area(SVF2N60F)
102
Operation in This Area is Limited by RDS(ON)
101 100µs
1ms
100 10ms DC
10-1
10-2 100
Notes: 1.TC=25°C 2.Tj=150°C 3.RDS(ON)[max]=4.2Ω
101 102
Drain-Source Voltage - VDS(V)
103
Figure 9-3. Max. Safe Operating Area(SVF2N60M/D)
102
Operation in This Area
is Limited by RDS(ON) 101
100µs 1ms
100 10ms DC
10-1
10-2 100
Notes: 1.TC=25°C 2.Tj=150°C 3.RDS(ON)[max]=4.2Ω
101 102
Drain-Source Voltage - VDS(V)
103
Drain Current - ID(A)
Drain Current - ID(A)
Drain Current - ID(A)
Drain-Source On-Resistance (Normalized) – RDS(ON)
Figure 8. On-resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0 -100
-50
0
Notes: 1. VGS=10V 2. ID=1.0A
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF2N60NF)
102
101
100
10-1
10-2 100
Operation in this area is limited by RDS(ON)
100µs 1ms
10m.