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SVF2N60F Dataheets PDF



Part Number SVF2N60F
Manufacturers SL
Logo SL
Description 600V N-CHANNEL MOSFET
Datasheet SVF2N60F DatasheetSVF2N60F Datasheet (PDF)

SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used .

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SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  2A,600V,RDS(on)(typ.)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR Package Type TO-251D-3L TO-251J-3L TO-126F-3L TO-220F-3L TO-252-2L Marking SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60D Hazardous substance control Halogen free Halogen free Pb free Pb free Halogen free Packing Tube Tube Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.5 Page 1 of 12 SVF2N60M/MJ/NF/F/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25C TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ Tstg SVF2N 60NF 16 0.13 Ratings SVF2N SVF2N 60M/D 60MJ 600 ±30 2.0 1.3 8.0 34 35 0.27 0.28 115 -55~+150 -55~+150 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA SVF2N 60NF 7.81 120 Ratings SVF2N 60M/D SVF2N 60MJ 3.7 3.57 62.0 62.0 SVF2N 60F 23 0.18 Unit V V A A W W/C mJ C C SVF2N 60F 5.56 62.5 Unit C/W C/W HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.5 Page 2 of 12 SVF2N60M/MJ/NF/F/D_Datasheet ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=1.0A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=2.0A, RG=25 (Note 2,3) VDS=480V,ID=2.0A, VGS=10V (Note 2,3) Min. 600 --2.0 -- 179 ---------- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS Integral Reverse P-N Junction ISM Diode in the MOSFET VSD IS=2.0A,VGS=0V Trr IS=2.0A,VGS=0V, Qrr dIF/dt=100A/µS Notes: 1. L=30mH, IAS=2.52A, VDD=100V, RG=25, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Min. ------ Typ. ----- 3.7 233 32 2.8 8.9 23.0 23.4 24.9 8.24 1.64 4.44 Typ. ---- 326 0.87 Max. -1.0 ±100 4.0 4.2 303 ---------- Unit V µA nA V  pF ns nC Max. 2.0 8.0 1.4 --- Unit A V ns µC HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.5 Page 3 of 12 TYPICAL CHARACTERISTICS SVF2N60M/MJ/NF/F/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.5 Page 4 of 12 SVF2N60M/MJ/NF/F/D_Datasheet TYPICAL CHARACTERISTICS(continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage (Normalized)– BVDSS 1.1 1.0 Drain Current - ID(A) 0.9 0.8 -100 -50 0 Notes: 1. VGS=0V 2. ID=250µA 50 100 150 200 Junction Temperature – TJ(°C) Figure 9-1. Max. Safe Operating Area(SVF2N60F) 102 Operation in This Area is Limited by RDS(ON) 101 100µs 1ms 100 10ms DC 10-1 10-2 100 Notes: 1.TC=25°C 2.Tj=150°C 3.RDS(ON)[max]=4.2Ω 101 102 Drain-Source Voltage - VDS(V) 103 Figure 9-3. Max. Safe Operating Area(SVF2N60M/D) 102 Operation in This Area is Limited by RDS(ON) 101 100µs 1ms 100 10ms DC 10-1 10-2 100 Notes: 1.TC=25°C 2.Tj=150°C 3.RDS(ON)[max]=4.2Ω 101 102 Drain-Source Voltage - VDS(V) 103 Drain Current - ID(A) Drain Current - ID(A) Drain Current - ID(A) Drain-Source On-Resistance (Normalized) – RDS(ON) Figure 8. On-resistance vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 Notes: 1. VGS=10V 2. ID=1.0A 50 100 150 200 Junction Temperature – TJ(°C) Figure 9-2. Max. Safe Operating Area(SVF2N60NF) 102 101 100 10-1 10-2 100 Operation in this area is limited by RDS(ON) 100µs 1ms 10m.


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