BD13710STU

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 Package Packing Method Bulk Rail TO-126 3L Bulk Rail Bulk Rail © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 www.fairchildsemi.com 1 BD135 / 137 / 139 — Features Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol VCBO Collector-Base Voltage Parameter BD135 BD137 BD139 BD135 BD137 BD139 Value 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 1.25 150 - 55 to +150 Units V VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current ...