AOTF16N50

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT16N50L & AOTF16N50L TO-220 Top View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 16A < 0.37Ω 100% UIS Tested 100% Rg Tested TO-220F D G D S AOT16N50 G D S AOTF16N50 G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT16N50 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C TC=25° TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT16N50 65 0.5 0.45 278 2.2 16 11 AOTF16N50 500 ±30 16* 11* 64 6 540 1080 5 50.0 0.4 Units V V A A mJ mJ V/ns W W/ oC ° C ° C -55 to 150 300 AOTF16N50 65 -2.5 Units ° C/W ° C/W ° C/W Maximum Case-to-sink A Maximum Junctio...