IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 20 mW 50 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)...
