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C4160

Sanyo Semicon Device

2SC4160

Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Application...


Sanyo Semicon Device

C4160

File Download Download C4160 Datasheet


Description
Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 500 400 7 4 Unit V V V A A A W W PW≤300µs, duty cycle≤10% 8 1.5 2 Tc=25˚C 25 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1* hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15 10 10 Conditions Ratings min typ max 10 10 50 Unit µA µA * : The hFE1 of the 2SC4160 is classified as follows. When specifying the hFE1 rank, specify two or more ranks in principle. Continued on next page. Rank hFE 15 L to 30 20 M to 40 30 N to 50 Any and all SANYO products described or contained herein do not have specifications that can ...




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