SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1185
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC1185
DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage
regulator,inverter,switching mode power supply applications.
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 300 250 5 0.7 50 150 -55~150 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1185
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=100mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=500mA; IB=100mA
1.5
V
ICBO
Collector cut-off current
VCB=200V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=0.4A ; VCE=10V
40
200
2
SavantIC Semiconductor
Product Specification
...