C3149

Ordering number:EN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3149] JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter Conditions Ratings 900 800 7 1.5 5 0.8 40 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz 10* 8 15 30 MHz pF Conditions Ratings min typ max 10 10 40* Unit µA µA * : The hFE1 of the 2SC3149 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose fa...