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Ordering number : ENN7653
2SC5966
NPN Triple Diffused Planar Silicon Transistor
2SC5966
Ultrahigh-...
www.DataSheet4U.com
Ordering number : ENN7653
2SC5966
NPN Triple Diffused Planar Silicon
Transistor
2SC5966
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
Package Dimensions
unit : mm 2174A
[2SC5966]
16.0
5.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
5.45
DataSheet4U.com
3.5
0.8
2.1
Conditions
Ratings 1700 800 5 20 40 3.0 100 150 --55 to +150
Unit V V V A A W W °C °C
DataShee
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1700V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose f...
