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BZG03C120 Dataheets PDF



Part Number BZG03C120
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZG03C120 DatasheetBZG03C120 Datasheet (PDF)

BZG03C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 10 V to 270 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Int. construction VALUE 10 to 270 2 to 50 Pulse current Single UNIT V mA • Voltage stabilization ORDERING INFORMATION DE.

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BZG03C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 10 V to 270 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Int. construction VALUE 10 to 270 2 to 50 Pulse current Single UNIT V mA • Voltage stabilization ORDERING INFORMATION DEVICE NAME BZG03C-series BZG03C-series ORDERING CODE BZG03C-series-TR BZG03C-series-TR3 TAPED UNITS PER REEL 1500 (7" reel) 6000 (13" reel) 6000/box MINIMUM ORDER QUANTITY PACKAGE PACKAGE NAME DO-214AC WEIGHT 77 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Non repetitive peak surge power dissipation Junction to lead Mounted on epoxy-glass hard tissue, fig. 1b Junction to ambient air Mounted on epoxy-glass hard tissue, fig. 1b Mounted on Al-oxid-ceramic (Al2O3), fig. 1b Junction temperature Storage temperature range Forward voltage (max.) IF = 0.5 A TEST CONDITION RthJA < 25 K/W, Tamb = 100 °C RthJA < 100 K/W, Tamb = 50 °C tp = 100 μs sq.pulse, Tj = 25 °C pior to surge SYMBOL Ptot Ptot PZSM RthJL RthJA RthJA RthJA Tj Tstg VF VALUE 3000 1250 600 25 150 125 100 150 - 65 to + 150 1.2 UNIT mW mW W K/W K/W K/W K/W °C °C V Rev. 1.9, 29-Nov-11 Document Number: 85593 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZG03C-Series www.vishay.com Vishay Semiconductors REVERSE LEAKAGE CURRENT IR at VR μA MAX. 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 V TYP. 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 350 400 450 TEMPERATURE COEFFICIENT OF ZENER VOLTAGE TKVZ at IZT1 %/K MAX. 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 750 850 1000 MIN. 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MIN. BZG03C10 BZG03C11 BZG03C12 BZG03C13 BZG03C15 BZG03C16 BZG03C18 BZG03C20 BZG03C22 BZG03C24 BZG03C27 BZG03C30 BZG03C33 BZG03C36 BZG03C39 BZG03C43 BZG03C47 BZG03C51 BZG03C56 BZG03C62 BZG03C68 BZG03C75 BZG03C82 BZG03C91 BZG03C100 BZG03C110 BZG03C120 BZG03C130 BZG03C150 BZG03C160 BZG03C180 BZG03C200 BZG03C220 BZG03C240 BZG03C270 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 158 168 188 208 228 251 VZ at IZT1 V NOM. 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 MAX. 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 233 256 289 TEST CURRENT IZT1 mA DYNAMIC RESISTANCE ZZ at IZT1 Ω Rev. 1.9, 29-Nov-11 Document Number: 85593 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZG03C-Series www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 3.0 a) b) 5 2 1.5 10 2 Vishay Semiconductors IF - Forward Current (A) 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 25 94 9313 1 25 94 9581 VF - Forward Voltage (V) Fig. 1 - Boards for RthJA Definition (Copper Overlay 35 µ) Fig. 3 - Forward Current vs. Forward Voltage 3 RthJA = 25 K/W 2.5 2 1.5 RthJA = 100 K/W 1 0.5 0 0 25 50 75 100 125 150 PZSM - Non-Repetitive Surge Power Dissipation (W) 3.5 10 000 Ptot - Total Power Dissipation (W) 1000 100 10 0.01 0.1 1 10 100 94 9580 Tamb - Ambient Temperature (°C) 94 9582 tp - Pulse Length (ms) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Fig. 4 - Non Repetitive Surge Power Dissipation vs. Pulse Length Zthp - Thermal Resistance for Pulse Cond. (K/W) 1000 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 t.


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