FDS6675BZ

FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A „ Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 5.4 KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handing capability „ RoHS Compliant DD D D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Single Operation (Note 1a) PD (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature Ratings -30 ±25 -11 -55 2.5 1.2 1.0 -55 to 150 Units V V A W °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 °C/W 25 °C/W Package Marking and Ordering Information Device Marking FDS6675BZ Device FDS6675BZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2009 Fairchild Semiconduc...