N-CHANNEL MOSFET
R
N N-CHANNEL MOSFET
JCS630V/R/S/B/C/F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
9.0 A 200 V 0.4 ...
Description
R
N N-CHANNEL MOSFET
JCS630V/R/S/B/C/F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
9.0 A 200 V 0.4 Ω 22 nC
z z z UPS
APPLICATIONS
z High
efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 23pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
z z Crss ( 23pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O-F-N-B IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F Package Packaging Tube Tube Brede Tube Tube Tube Tube
:201003A
1/14
R
JCS630V/R/S/B/C/F
ABSOLUTE RATINGS (Tc=25℃)
JCS630V/R JCS630F Value JCS630S/B/C 200 9.0 5.7 9.0* 5.7* Unit V A A
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3)
36
36*
A
VGSS
±30
V
EAS
160
mJ
IAR
9.0
A
EAR
7.2
mJ
dv/dt
5.5
V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃ TJ,TSTG
...
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