Document
R
N N-CHANNEL MOSFET
JCS630V/R/S/B/C/F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
9.0 A 200 V 0.4 Ω 22 nC
z z z UPS
APPLICATIONS
z High
efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 23pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
z z Crss ( 23pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O-F-N-B IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F Package Packaging Tube Tube Brede Tube Tube Tube Tube
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ABSOLUTE RATINGS (Tc=25℃)
JCS630V/R JCS630F Value JCS630S/B/C 200 9.0 5.7 9.0* 5.7* Unit V A A
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3)
36
36*
A
VGSS
±30
V
EAS
160
mJ
IAR
9.0
A
EAR
7.2
mJ
dv/dt
5.5
V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃ TJ,TSTG
48
72
38
W
0.39
0.57
0.3
W/℃
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes
-55~+150
℃
TL
300
℃
* *Drain current limited by maximum junction temperature
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Tests conditions Min Typ Max Units Parameter Symbol
ELECTRICAL CHARACTERISTICS
Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250μA 2.0 4.0 V BVDSS ID=250μA, VGS=0V 200 V
ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=200V,VGS=0V, TC=25℃ VDS=160V, IGSSF VDS=0V, TC=125℃
-
0.2
-
V/℃
IDSS
-
-
10 100 100
μA μA nA
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=4.5A VDS = 40V, ID=4.5A(note 4) VDS=25V, VGS =0V, f=1.0MHZ
-
0.34 0.4
Ω
gfs
-
7.05
-
S
Dynamic Characteristics Ciss Coss Crss 550 720 85 22 110 29 pF pF pF
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td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=9.0A VGS =10V (note 4,5) VDD=100V,ID=9.0A,RG=25Ω (note 4,5) 11 30 ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge 70 150 60 130 65 140 22 3.6 10.2 29 -
- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 9.0 A
ISM
-
-
36
A
VGS=0V,
IS=9.0A
-
-
1.5
V
trr Qrr
VGS=0V, IS=9.0A dIF/dt=100A/μs (note 4)
-
140 0.87
-
ns μC
THERMAL CHARACTERISTIC
Max JCS630V/R JCS630S/B/C JCS630F 2.70 110 1.74 62.5 3.33 62.5 Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Unit ℃/W ℃/W
Rth(j-A) Thermal Resistance, Junction to Ambient
: 1: 2:L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤9.0A,di/dt ≤200A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction temperature 2:L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤9.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics
10
150℃
1
25℃
0.1
Notes: 1.250μs pulse test 2.VDS=40V
2 4 6 8 10
VGS Gate-Source Voltage[V]
On-Resistance Variation vs. Drain Current and Gate Voltage
Body Diode Forward Voltage Variation vs. Source Current and Temperature
IDR Reverse Drain Current[A]
10
1
150℃ 25℃
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD Source-Drain voltage[V]
Capacitance Characteristics
Gate Charge Characteristics
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ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature
1.2
3.0
2.5
BVDS(Normalized)
R D(on)(Normalized)
Notes: 1. VGS=0V 2. ID=250μA
-50 -25 0 25 50 75 100 125 150
1.1
2.0
1.0
1.5
1.0
0.9
0.5
Notes: 1. VGS=10V 2. ID=4.5A
-50 -25 0 25 50 75 100 125 150
0.8 -75
0.