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JCS630V Dataheets PDF



Part Number JCS630V
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS630V DatasheetJCS630V Datasheet (PDF)

R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 23pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 23pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS630V-O-V-N-B JCS630R-O-R-.

  JCS630V   JCS630V



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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 23pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 23pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O-F-N-B IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F Package Packaging Tube Tube Brede Tube Tube Tube Tube :201003A 1/14 R JCS630V/R/S/B/C/F ABSOLUTE RATINGS (Tc=25℃) JCS630V/R JCS630F Value JCS630S/B/C 200 9.0 5.7 9.0* 5.7* Unit V A A Parameter - Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3) 36 36* A VGSS ±30 V EAS 160 mJ IAR 9.0 A EAR 7.2 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ TJ,TSTG 48 72 38 W 0.39 0.57 0.3 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55~+150 ℃ TL 300 ℃ * *Drain current limited by maximum junction temperature :201003A 2/14 R JCS630V/R/S/B/C/F Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250μA 2.0 4.0 V BVDSS ID=250μA, VGS=0V 200 V ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=200V,VGS=0V, TC=25℃ VDS=160V, IGSSF VDS=0V, TC=125℃ - 0.2 - V/℃ IDSS - - 10 100 100 μA μA nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=4.5A VDS = 40V, ID=4.5A(note 4) VDS=25V, VGS =0V, f=1.0MHZ - 0.34 0.4 Ω gfs - 7.05 - S Dynamic Characteristics Ciss Coss Crss 550 720 85 22 110 29 pF pF pF :201003A 3/14 R JCS630V/R/S/B/C/F td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=9.0A VGS =10V (note 4,5) VDD=100V,ID=9.0A,RG=25Ω (note 4,5) 11 30 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge 70 150 60 130 65 140 22 3.6 10.2 29 - - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 9.0 A ISM - - 36 A VGS=0V, IS=9.0A - - 1.5 V trr Qrr VGS=0V, IS=9.0A dIF/dt=100A/μs (note 4) - 140 0.87 - ns μC THERMAL CHARACTERISTIC Max JCS630V/R JCS630S/B/C JCS630F 2.70 110 1.74 62.5 3.33 62.5 Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Unit ℃/W ℃/W Rth(j-A) Thermal Resistance, Junction to Ambient : 1: 2:L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤9.0A,di/dt ≤200A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤9.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature :201003A 4/14 R JCS630V/R/S/B/C/F ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics 10 150℃ 1 25℃ 0.1 Notes: 1.250μs pulse test 2.VDS=40V 2 4 6 8 10 VGS Gate-Source Voltage[V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR Reverse Drain Current[A] 10 1 150℃ 25℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD Source-Drain voltage[V] Capacitance Characteristics Gate Charge Characteristics :201003A 5/14 R JCS630V/R/S/B/C/F ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature 1.2 3.0 2.5 BVDS(Normalized) R D(on)(Normalized) Notes: 1. VGS=0V 2. ID=250μA -50 -25 0 25 50 75 100 125 150 1.1 2.0 1.0 1.5 1.0 0.9 0.5 Notes: 1. VGS=10V 2. ID=4.5A -50 -25 0 25 50 75 100 125 150 0.8 -75 0.


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