ME60N03

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), [email protected],Ids@20A =13mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 30 ±20 50 100 50 23 -55 to 150 110 T≦10 sec Steady State 20 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.5mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2007 – Version 4.1 01 ME60N03 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RL=15Ω, VGEN =10V, ID=1A VDD=15V, RG=24Ω VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS=10V, ID=35A 22 4.5 ...