CEI02N6

CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6 CEB02N6 CEI02N6 CEF02N6 VDSS 600V 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G CEI SERIES TO-262(I2-PAK) G D S G D CEP SERIES TO-220 S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAR EAR TJ,Tstg f TO-220F Units V V 600 ±30 2 6 60 0.48 125 2 5.4 -55 to 150 2 6 29 0.23 125 2 5.4 e e A A W W/ C mJ A mJ C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy a Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 2.1 62.5 Limit 4.3 65 Units C/W C/W 2002.September 4-2 http://www.cetsemi.com http://www.Datasheet4U.com CEP02N6/CEB02N6 CEI02N6/CEF02N6 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate...