TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications
Power Switching Applications
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −1 A)
• High collector power dissipation: PC = 900 mW (Ta = 25 °C)
• High-speed switching: tstg = 300 ns (typ.)
• Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C)
Collector power dissipation
Storage temperature range
−55 to 150
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).