FGA60N65SMD

FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features Maximum Junction Temperature : TJ = High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A Fast Switching : EOFF = 7.5 uJ/A Tighten Parameter Distribution RoHS Compliant 175oC Positive Temperature Co-efficient for Easy Parallel Operating General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS C G TO-3PN G CE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Ratings 650 ± 20 ± 30 120 60 180 60 30 180 600 300 -55 to +175 -55 to +175 300 Unit V V V A A A A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. ...