H30R90

Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Qualified according to JEDEC1 for target applications Application specific optimisation of inverse diode Pb-free lead plating; RoHS compliant Applications: Microwave Oven Soft Switching Applications for ZCS Type IHW30N90R 900V Maximum Ratings Parameter Sy Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s P tot 454 T j -40...+ Tstg 175 -55...+175 260 IFpuls VGE ICpuls IF 60 30 90 ±20 ±25 W °C °C V IC 60 30 90 90 mbol VCE Value 900 Unit V A VCE I C C G E PG-TO-247-3 VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Packag H30R90 PG-TO e -247-3 30A 1 J-STD-020 and JESD-022 1 Rev. 2.2 Nov 08 http://www.Datasheet4U.com Power Semiconductors Soft Switching Series IHW30N90R q Max. Value 0.33...