MC3443BDV

Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Si3443BDV/MC3443BDV PRODUCT SUMMARY V rDS(on)m(OHM) DS (V) 65 @ V G S= -4.5V -20 100 @ V G S= -2.5V 150 @ V G S= -1.8V 1 2 3 ID (A) -4.5 -4.2 -3.1 6 5 4 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuou s Drain Current Pulsed Drain Current b a a TA=25 C TA=70 C o o ID IDM IS -4.5 -3.6 ±20 -1.7 2.0 1.3 -55 to 150 A W o A Continuou s Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Symbol R?JA Maximum 62.5 110 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn http://www.Datasheet4U.com Freescale Si3443BDV/MC3443BDV SPECIFICATION...