P-Channel Silicon MOSFET
Ordering number : EN8759
EMH2314
SANYO Semiconductors
DATA SHEET
EMH2314
Features
• •
P-Channel Silicon MOSFET
Gen...
Description
Ordering number : EN8759
EMH2314
SANYO Semiconductors
DATA SHEET
EMH2314
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=28mΩ(typ.) 1.8V drive Halogen free compliance Protection Diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings -12 ±10 --5 -20 1.0 1.2 150 -55 to +150 Unit V V A A W W °C °C
Package Dimensions
unit : mm (typ.) 7045-002
0.2 0.2 0.125
Product & Package Information
Package : EMH8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel
EMH2314-TL-H
8
5
Taping Type : TL
1.7 2.1
Marking
MP
TL
1
0.5 2.0
0.2
4
LOT No.
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8
Electrical Connection
8 7 6 5
0.05
0.75
1
2
3
4
http://semicon.sanyo.com/en/network
50112PE TKIM TC-00002667 No. 8759-1/7
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EMH2314
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance In...
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