EMH2314

Ordering number : EN8759 EMH2314 SANYO Semiconductors DATA SHEET EMH2314 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=28mΩ(typ.) 1.8V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings -12 ±10 --5 -20 1.0 1.2 150 -55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ.) 7045-002 0.2 0.2 0.125 Product & Package Information Package : EMH8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel EMH2314-TL-H 8 5 Taping Type : TL 1.7 2.1 Marking MP TL 1 0.5 2.0 0.2 4 LOT No. 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 Electrical Connection 8 7 6 5 0.05 0.75 1 2 3 4 http://semicon.sanyo.com/en/network 50112PE TKIM TC-00002667 No. 8759-1/7 http://www.Datasheet4U.com EMH2314 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance In...