Document
BT152-400R(600R,800R)G
SCRs
Simplified outline
Description
Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection, motor control circuit in power tool, inrush current limit circuit and heating control system.
12 3
TO-220AB
Symbol
Features
• Blocking voltage to 800 V • On-state RMS current to 20 A • Ultra low gate trigger current
a g
k
Applications
• Motor control • Industrial and domestic lighting • Heating • Static switching
Pin
1 2 3 TAB
Description
cathode anode gate anode
SYMBOL
V DRM V RRM I TR
MS
PARAMETER
Repetitive peak off-state voltages Voltages RMS on-state current Non-repetitive peak on-state current 400RG 600RG 800RG
Value
450 650 800 20 200
Unit
V
A A
I TSM
SYMBOL
Rth j-mb Rth j-a
PARAMETER
Thermal resistance Junction to mounting base Thermal resistance Junction to ambient
CONDITIONS
MIN -
TYP 60
MAX
1.1
UNIT
K/W K/W
In free air
-
-
@ 2010 Copyright By American First Semiconductor
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BT152-400R(600R,800R)G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
V DRM V RRM I TAV I T(RMS) I TSM
2 It
PARAMETER
Repetitive peak off-state Voltages Average on-state current RMS on-state current Non-repetitive peak On-state current 2 I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature
CONDITIONS
500RG 650RG 800RG
Half sine wave;Tmb<=103 All conduction angles half sine wave; Tj = 25 T=10ms prior to surge T=8.3ms T=10ms I TM=50 A; I G=0.2 A; D IG /dt=0.2 A/ s
MIN
-
MAX
500 650 800
13 20 200 220 200 200
UNIT
V
-40
A A A A AS A/ s
2
DI T/dt I GM V GM P GM P G(AV) T stg Tj
Over any 20 ms period
5 5 20 0.5 150 125
A V W W
-
TJ =25 C unless otherwise stated
£
SYMBOL
I GT
PARAMETER
Gate trigger current
CONDITIONS
V DT =12V; I =0.1A
MIN
-
TYP MAX UNIT
3 32 mA
Static characteristics
IL
Latching current
V DG =12V; I T=0.1A
-
25
80
mA
IH VT V GT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
V DG =12V; I T=0.1A I T=40A V DT =12V;I =0.1A O V D=V DRM(max) ;I T=0.1A;T J=125 C
O V= D V DRM(max) ;V= R V RRM(max) T J =125 C
0.25
15 1.4 0.6 0.4 0.2
60 1.75 1.5 1.0
mA V V V mA
-
Dynamic Characteristics
D/ VD dt t gt tg
Critical rate of rise of Off-state voltage Gate controlled turn-on time Crcuit commutated tumoff time V DM =67% V DRM(max) ;Tj=125 C; exponential wave form; gate open circuit I TM =40A;V D=V DRM(max) ; I G=0.1A; Dl G/dt=5A/ s o V DM=67% V DRM(max);Tj=125 C;I TM=50A V RT =25V;dI M/dt=30A/ S
o
200
300
2
-
V/ s
s
-
-
70
-
s
Dl G /dt=50V/ s;R GK =100
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BT152-400R(600R,800R)G
Description
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BT152-400R(600R,800R)G
Description
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BT152-400R(600R,800R)G
Package Mechanical Data
TO-220AB (Plastic)
DIMENSIONS
B C
REF.
Millimeters Min. Typ. 3.75 Max. Min.
Inches Typ. 0.147 Max. 0.625
b2
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
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