BUK9508-55A

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9508-55A BUK9608-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V V GS = 10 V MAX. 55 75 200 175 8 7.3 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain source ww re .nu at an e ce. 8 com Tr ia PIN CONFIGURATION mb tab SYMBOL 2 1 3 12 3 tab/mb drain SOT404 TO220AB LIMITING VALUES SYMBOL VDS VDGR ±VGS ±VGSM Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS RGS = 20 kΩ tp≤50µS Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature F w C l d g s MIN. -5 - MAX. 55 5 10 15 75 65 400 200 175 UNIT V V V V A A A W ˚C PD ID ID IDM Ptot Tstg, Tj Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Ther...