FGH40N60SMD

FGH40N60SMD — 600 V, 40 A Field Stop IGBT FGH40N60SMD 600 V, 40 A Field Stop IGBT Features Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Switching: EOFF = 6.5 uJ/A Tighten Parameter Distribution RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS October 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2010 Fairchild Semiconductor Corporation FGH40N60S...